Head of the Department of Microelectronic and Nanotechnology at the Faculty of Electronics, Photonics and Microsystems, Wroclaw University of Science and Technology, Poland.
Prof. Paszkiewicz is co-founder of the research school within the Department of Microelectronics and Nanotechnology of the Wroclaw University of Science and Technology focused on the application of nitrides of the third group of the periodic table (AIIIN) to the design and development of lateral and vertical high electron mobility transistors (LHEMTs and VHEMTs) and piezotronic devices.
Main research topic
Since 1984 she has been involved in numerous research programs covering broad range of semiconductor technologies: MOVPE nanostructures based on (Ga,In,Al)(As,P,N) compounds, LPE layers growth from Ga-Bi solution, GaAs/AlGaAs waveguide modulators and GaAs microwave devices. This research included various devices design, fabrication and parameter evaluation such as MESFETs, HEMTs and MMIC amplifiers.
Since 1997, Prof. Paszkiewicz research is oriented around the growth and characterization of MOVPE (Ga,Al,In)N layers for LHEMTs, VHEMTs, bio- and chemo-sensor transducers applications, with particular focus on the ELO (Epitaxial Lateral Overgrowth) of GaN, gallium nitride epitaxy on silicon substrates and processing of nitrides based devices.
Prof. Paszkiewicz is a co-author of more than 330 publications, conference papers and numerous technical reports. Her articles were cited 820 times. She is full professor at WUST.